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SIHA21N60EF-GE3

Vishay Siliconix
SIHA21N60EF-GE3 Preview
Vishay Siliconix
N-CHANNEL 600V
$4.20
Available to order
Reference Price (USD)
1+
$4.20000
500+
$4.158
1000+
$4.116
1500+
$4.074
2000+
$4.032
2500+
$3.99
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack

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