RM5N800HD
Rectron USA
Rectron USA
MOSFET N-CHANNEL 800V 5A TO263-2
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
Discount
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Discover RM5N800HD, a versatile Transistors - FETs, MOSFETs - Single solution from Rectron USA, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 98W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Rectron USA