ISC080N10NM6ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TDSON-8
$2.03
Available to order
Reference Price (USD)
1+
$2.03000
500+
$2.0097
1000+
$1.9894
1500+
$1.9691
2000+
$1.9488
2500+
$1.9285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with ISC080N10NM6ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust ISC080N10NM6ATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
Related Products
Rohm Semiconductor
RSM002P03T2L
Nexperia USA Inc.
PMPB25ENEA115
Infineon Technologies
BSC037N08NS5TATMA1
Texas Instruments
CSD18543Q3A
Diodes Incorporated
DMT4008LFV-7
Fairchild Semiconductor
HUF75329D3S
Rectron USA
RM4P30S6
onsemi
NVMFS5C645NLWFAFT3G
Renesas Electronics America Inc
RJK0452DPB-00#J5
onsemi