BSC037N08NS5TATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 22A/100A TDSON
$3.13
Available to order
Reference Price (USD)
1+
$3.13000
500+
$3.0987
1000+
$3.0674
1500+
$3.0361
2000+
$3.0048
2500+
$2.9735
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSC037N08NS5TATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSC037N08NS5TATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 72µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
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