MSC080SMA120B4
Microchip Technology
Microchip Technology
SICFET N-CH 1200V 37A TO247-4
$12.02
Available to order
Reference Price (USD)
1+
$12.02000
500+
$11.8998
1000+
$11.7796
1500+
$11.6594
2000+
$11.5392
2500+
$11.419
Exquisite packaging
Discount
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Discover high-performance MSC080SMA120B4 from Microchip Technology, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, MSC080SMA120B4 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
- Vgs (Max): +23V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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