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MSC080SMA120B4

Microchip Technology
MSC080SMA120B4 Preview
Microchip Technology
SICFET N-CH 1200V 37A TO247-4
$12.02
Available to order
Reference Price (USD)
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$12.02000
500+
$11.8998
1000+
$11.7796
1500+
$11.6594
2000+
$11.5392
2500+
$11.419
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
  • Vgs (Max): +23V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4

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