Shopping cart

Subtotal: $0.00

PJW5P03_R2_00001

Panjit International Inc.
PJW5P03_R2_00001 Preview
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA

Related Products

Rectron USA

RM5N800HD

Microchip Technology

MSC080SMA120B4

Vishay Siliconix

IRLR024TRLPBF

Infineon Technologies

ISC080N10NM6ATMA1

Rohm Semiconductor

RSM002P03T2L

Nexperia USA Inc.

PMPB25ENEA115

Infineon Technologies

BSC037N08NS5TATMA1

Texas Instruments

CSD18543Q3A

Diodes Incorporated

DMT4008LFV-7

Fairchild Semiconductor

HUF75329D3S

Top