RF1S4N100SM9A
Harris Corporation
Harris Corporation
MOSFET N-CH 1000V 4.3A TO263AB
$3.13
Available to order
Reference Price (USD)
1+
$3.13000
500+
$3.0987
1000+
$3.0674
1500+
$3.0361
2000+
$3.0048
2500+
$2.9735
Exquisite packaging
Discount
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RF1S4N100SM9A by Harris Corporation is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, RF1S4N100SM9A ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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