Shopping cart

Subtotal: $0.00

IXTA200N055T2-7

IXYS
IXTA200N055T2-7 Preview
IXYS
MOSFET N-CH 55V 200A TO263-7
$3.51
Available to order
Reference Price (USD)
1+
$3.51280
500+
$3.477672
1000+
$3.442544
1500+
$3.407416
2000+
$3.372288
2500+
$3.33716
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7 (IXTA)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

Related Products

Rohm Semiconductor

BSM300C12P3E201

Diodes Incorporated

DMP1045UCB4-7

Diodes Incorporated

BSS138WQ-13-F

Diodes Incorporated

DMN2710UW-7

Renesas Electronics America Inc

NP90N04VDK-E1-AY

STMicroelectronics

STP10NK62ZFP

Top