BSM300C12P3E201
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 300A MODULE
$750.60
Available to order
Reference Price (USD)
1+
$750.60000
500+
$743.094
1000+
$735.588
1500+
$728.082
2000+
$720.576
2500+
$713.07
Exquisite packaging
Discount
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Discover high-performance BSM300C12P3E201 from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, BSM300C12P3E201 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1360W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: Module
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