UPA2706GR-E1-AT
Renesas
Renesas
UPA2706GR-E1-AT - MOS FIELD EFFE
$1.07
Available to order
Reference Price (USD)
1+
$1.07161
500+
$1.0608939
1000+
$1.0501778
1500+
$1.0394617
2000+
$1.0287456
2500+
$1.0180295
Exquisite packaging
Discount
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Boost your electronic applications with UPA2706GR-E1-AT, a reliable Transistors - FETs, MOSFETs - Single by Renesas. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, UPA2706GR-E1-AT meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 15W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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