RJK5013DPP-E0#T2
Renesas
Renesas
RJK5013DPP-E0#T2 - SILICON N CHA
$4.56
Available to order
Reference Price (USD)
1+
$4.55523
500+
$4.5096777
1000+
$4.4641254
1500+
$4.4185731
2000+
$4.3730208
2500+
$4.3274685
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RJK5013DPP-E0#T2 by Renesas. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RJK5013DPP-E0#T2 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 465mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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