NVMFWS3D0P04M8LT1G
onsemi
onsemi
MV8 P INITIAL PROGRAM
$1.51
Available to order
Reference Price (USD)
1+
$1.51477
500+
$1.4996223
1000+
$1.4844746
1500+
$1.4693269
2000+
$1.4541792
2500+
$1.4390315
Exquisite packaging
Discount
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Optimize your electronic systems with NVMFWS3D0P04M8LT1G, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NVMFWS3D0P04M8LT1G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
- Vgs(th) (Max) @ Id: 2.4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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