PJQ4465AP-AU_R2_000A1
Panjit International Inc.
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
$0.64
Available to order
Reference Price (USD)
1+
$0.64000
500+
$0.6336
1000+
$0.6272
1500+
$0.6208
2000+
$0.6144
2500+
$0.608
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
PJQ4465AP-AU_R2_000A1 by Panjit International Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PJQ4465AP-AU_R2_000A1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 20W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
Related Products
STMicroelectronics
STD60NF55LT4
STMicroelectronics
STD95N4LF3
Vishay Siliconix
SIHA21N60EF-GE3
STMicroelectronics
STF27N60M2-EP
Panjit International Inc.
PJW5P03_R2_00001
Rectron USA
RM5N800HD
Microchip Technology
MSC080SMA120B4
Vishay Siliconix
IRLR024TRLPBF
Infineon Technologies
ISC080N10NM6ATMA1
Rohm Semiconductor