IKN01N60RC2ATMA1
Infineon Technologies
Infineon Technologies
HOME APPLIANCES 14 PG-SOT223-3
$0.76
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Reference Price (USD)
1+
$0.76000
500+
$0.7524
1000+
$0.7448
1500+
$0.7372
2000+
$0.7296
2500+
$0.722
Exquisite packaging
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Enhance your electronic designs with IKN01N60RC2ATMA1 Single IGBTs from Infineon Technologies, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Infineon Technologies's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 2.2 A
- Current - Collector Pulsed (Icm): 3 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
- Power - Max: 5.1 W
- Switching Energy: 25.1µJ (on), 13.5µJ (off)
- Input Type: Standard
- Gate Charge: 9 nC
- Td (on/off) @ 25°C: 5.6ns/80ns
- Test Condition: 400V, 1A, 49Ohm, 15V
- Reverse Recovery Time (trr): 59.5 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-3
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