F3L200R07PE4
Infineon Technologies
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
$152.09
Available to order
Reference Price (USD)
1+
$152.09000
500+
$150.5691
1000+
$149.0482
1500+
$147.5273
2000+
$146.0064
2500+
$144.4855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with F3L200R07PE4 Single IGBTs from Infineon Technologies, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Infineon Technologies's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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