HGTG12N60C3DR
Harris Corporation
Harris Corporation
UFS SERIES N-CHANNEL IGBT
$2.07
Available to order
Reference Price (USD)
1+
$2.07000
500+
$2.0493
1000+
$2.0286
1500+
$2.0079
2000+
$1.9872
2500+
$1.9665
Exquisite packaging
Discount
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The HGTG12N60C3DR Single IGBT by Harris Corporation is a game-changer for energy-efficient systems. Ideal for HVAC, robotics, and power distribution, it boasts fast turn-off times and low gate drive requirements. Its advanced technology reduces energy waste and improves system longevity. Trust Harris Corporation for premium-quality transistors backed by exceptional support. Request a sample or quote now to start your next innovation!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 48 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: 400µJ (on), 340µJ (off)
- Input Type: Standard
- Gate Charge: 71 nC
- Td (on/off) @ 25°C: 37ns/120ns
- Test Condition: 480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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