IXXH80N65B4D1
IXYS
IXYS
DISC IGBT XPT-GENX4 TO-247AD
$11.20
Available to order
Reference Price (USD)
1+
$11.20000
500+
$11.088
1000+
$10.976
1500+
$10.864
2000+
$10.752
2500+
$10.64
Exquisite packaging
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Choose IXXH80N65B4D1 Single IGBTs by IXYS for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. IXYS's reputation for quality makes IXXH80N65B4D1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 180 A
- Current - Collector Pulsed (Icm): 430 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
- Power - Max: 625 W
- Switching Energy: 3.36mJ (on), 1.83mJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 26ns/112ns
- Test Condition: 400V, 80A, 3Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)