HGTP20N60C3R
Harris Corporation
Harris Corporation
40A, 600V, RUGGED N-CHANNEL IGBT
$4.53
Available to order
Reference Price (USD)
1+
$4.53000
500+
$4.4847
1000+
$4.4394
1500+
$4.3941
2000+
$4.3488
2500+
$4.3035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with HGTP20N60C3R Single IGBTs from Harris Corporation, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Harris Corporation ensures HGTP20N60C3R meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
- Power - Max: 164 W
- Switching Energy: 500µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 122 nC
- Td (on/off) @ 25°C: 28ns/151ns
- Test Condition: 480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 24 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
IXYS
IXXH80N65B4D1
IXYS
IXYH30N120C4
Harris Corporation
HGTP3N60C3
Harris Corporation
HGTP20N35F3ULR3935
onsemi
FGB3245G2-F085C
IXYS
IXXH30N65B4D1
onsemi
MGY30N60D
Infineon Technologies
F3L200R07PE4
Toshiba Semiconductor and Storage
GT40QR21(STA1,E,D
Harris Corporation