IXXH30N65B4D1
IXYS
IXYS
IGBT
$5.28
Available to order
Reference Price (USD)
30+
$5.19767
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize energy efficiency with IXXH30N65B4D1 Single IGBTs by IXYS, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose IXXH30N65B4D1 for your next project and experience the IXYS difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 146 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 230 W
- Switching Energy: 1.04mJ (on), 730µJ (off)
- Input Type: Standard
- Gate Charge: 52 nC
- Td (on/off) @ 25°C: 20ns/150ns
- Test Condition: 400V, 30A, 15Ohm, 15V
- Reverse Recovery Time (trr): 65 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
Related Products
onsemi
MGY30N60D
Infineon Technologies
F3L200R07PE4
Toshiba Semiconductor and Storage
GT40QR21(STA1,E,D
Harris Corporation
HGTH12N40CID
IXYS
IXGT6N170-TRL
Infineon Technologies
FP150R07N3E4_B11
onsemi
AFGHL40T120RHD
IXYS
CSM350KN
IXYS
ITF38IF1200HJ
Renesas Electronics America Inc