UJ3C120150K3S
UnitedSiC
UnitedSiC
SICFET N-CH 1200V 18.4A TO247-3
$10.55
Available to order
Reference Price (USD)
1+
$10.55000
500+
$10.4445
1000+
$10.339
1500+
$10.2335
2000+
$10.128
2500+
$10.0225
Exquisite packaging
Discount
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Upgrade your electronic designs with UJ3C120150K3S by UnitedSiC, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, UJ3C120150K3S ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
- Vgs(th) (Max) @ Id: 5.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 166.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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