IXFK90N60X
IXYS
IXYS
MOSFET N-CH 600V 90A TO264
$18.24
Available to order
Reference Price (USD)
50+
$11.91400
Exquisite packaging
Discount
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IXYS presents IXFK90N60X, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXFK90N60X delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1100W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA
- Package / Case: TO-264-3, TO-264AA
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