IPTG007N06NM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-HSOG-8
$7.78
Available to order
Reference Price (USD)
1+
$7.78000
500+
$7.7022
1000+
$7.6244
1500+
$7.5466
2000+
$7.4688
2500+
$7.391
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IPTG007N06NM5ATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPTG007N06NM5ATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
Related Products
onsemi
NCP81253AMNTBG
Infineon Technologies
IMZA120R040M1HXKSA1
IXYS
IXFK90N60X
Diodes Incorporated
DMT8030LFDF-7
Renesas Electronics America Inc
2SK1292(02)-S6-AZ
IXYS
IXFP16N85XM
Harris Corporation
RFP8P06LE
Diodes Incorporated
DMP4015SPSQ-13
Diodes Incorporated
DMTH6005LPS-13
Vishay Siliconix