IMZA120R040M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$24.61
Available to order
Reference Price (USD)
1+
$24.61000
500+
$24.3639
1000+
$24.1178
1500+
$23.8717
2000+
$23.6256
2500+
$23.3795
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IMZA120R040M1HXKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IMZA120R040M1HXKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 8.3mA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 1620 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-8
- Package / Case: TO-247-4
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