DMT8030LFDF-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V U-DFN2020
$0.32
Available to order
Reference Price (USD)
1+
$0.32059
500+
$0.3173841
1000+
$0.3141782
1500+
$0.3109723
2000+
$0.3077664
2500+
$0.3045605
Exquisite packaging
Discount
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Experience the power of DMT8030LFDF-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMT8030LFDF-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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