SCT3017ALGC11
Rohm Semiconductor
Rohm Semiconductor
650V, 118A, THD, TRENCH-STRUCTUR
$122.40
Available to order
Reference Price (USD)
1+
$122.40000
500+
$121.176
1000+
$119.952
1500+
$118.728
2000+
$117.504
2500+
$116.28
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SCT3017ALGC11, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SCT3017ALGC11 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
- Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 427W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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