IPDD60R055CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 52A HDSOP-10
$10.36
Available to order
Reference Price (USD)
1+
$10.36000
500+
$10.2564
1000+
$10.1528
1500+
$10.0492
2000+
$9.9456
2500+
$9.842
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPDD60R055CFD7XTMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPDD60R055CFD7XTMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 760µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 329W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
Related Products
Taiwan Semiconductor Corporation
TSM033NA03CR RLG
Renesas Electronics America Inc
2SK2158-T2B-A
IXYS
IXTA2N100P
Infineon Technologies
IRFR4105TRLPBF
Nexperia USA Inc.
BUK7611-55B,118
Diodes Incorporated
DMN1008UFDF-7
IXYS
IXTK5N250
Taiwan Semiconductor Corporation
TSM100N06CZ C0G
Infineon Technologies
SPD09P06PLGBTMA1
Alpha & Omega Semiconductor Inc.