C3M0120090D
Wolfspeed, Inc.
Wolfspeed, Inc.
SICFET N-CH 900V 23A TO247-3
$11.47
Available to order
Reference Price (USD)
1+
$6.75000
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose C3M0120090D by Wolfspeed, Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with C3M0120090D inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
- Vgs (Max): +18V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
- FET Feature: -
- Power Dissipation (Max): 97W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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