2N6760TXV
Harris Corporation
Harris Corporation
5.5A, 400V, 1OHM, N-CHANNEL
$7.76
Available to order
Reference Price (USD)
1+
$7.76000
500+
$7.6824
1000+
$7.6048
1500+
$7.5272
2000+
$7.4496
2500+
$7.372
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Harris Corporation presents 2N6760TXV, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, 2N6760TXV delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3
- Package / Case: TO-204AA
Related Products
STMicroelectronics
STL45N60DM6
Infineon Technologies
IPDD60R055CFD7XTMA1
Taiwan Semiconductor Corporation
TSM033NA03CR RLG
Renesas Electronics America Inc
2SK2158-T2B-A
IXYS
IXTA2N100P
Infineon Technologies
IRFR4105TRLPBF
Nexperia USA Inc.
BUK7611-55B,118
Diodes Incorporated
DMN1008UFDF-7
IXYS
IXTK5N250
Taiwan Semiconductor Corporation