DMN1008UFDF-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 12V 12.2A 6UDFN
$0.15
Available to order
Reference Price (USD)
1+
$0.14865
500+
$0.1471635
1000+
$0.145677
1500+
$0.1441905
2000+
$0.142704
2500+
$0.1412175
Exquisite packaging
Discount
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Optimize your electronic systems with DMN1008UFDF-7, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMN1008UFDF-7 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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