RM130N200T2
Rectron USA
Rectron USA
MOSFET N-CH 200V 132A TO220-3
$3.84
Available to order
Reference Price (USD)
1+
$3.84000
500+
$3.8016
1000+
$3.7632
1500+
$3.7248
2000+
$3.6864
2500+
$3.648
Exquisite packaging
Discount
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Optimize your electronic systems with RM130N200T2, a high-quality Transistors - FETs, MOSFETs - Single from Rectron USA. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, RM130N200T2 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 429W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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