IPD30N03S4L09ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 30A TO252-3
$1.21
Available to order
Reference Price (USD)
2,500+
$0.34308
5,000+
$0.31942
12,500+
$0.30759
25,000+
$0.30114
Exquisite packaging
Discount
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Discover high-performance IPD30N03S4L09ATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPD30N03S4L09ATMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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