IPA105N15N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 37A TO220-FP
$5.96
Available to order
Reference Price (USD)
1+
$5.52000
10+
$4.96300
100+
$4.12690
500+
$3.40280
1,000+
$2.92007
Exquisite packaging
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Boost your electronic applications with IPA105N15N3GXKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPA105N15N3GXKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id: 4V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 40.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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