SCT4026DEC11
Rohm Semiconductor
Rohm Semiconductor
750V, 26M, 3-PIN THD, TRENCH-STR
$23.15
Available to order
Reference Price (USD)
1+
$23.15000
500+
$22.9185
1000+
$22.687
1500+
$22.4555
2000+
$22.224
2500+
$21.9925
Exquisite packaging
Discount
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SCT4026DEC11 by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SCT4026DEC11 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
- Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
- Vgs (Max): +21V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 176W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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