RJH1BF7RDPQ-80#T2
Renesas
Renesas
RJH1BF7 - INSULATED GATE BIPOLAR
$5.75
Available to order
Reference Price (USD)
1+
$5.75115
500+
$5.6936385
1000+
$5.636127
1500+
$5.5786155
2000+
$5.521104
2500+
$5.4635925
Exquisite packaging
Discount
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Discover high-performance RJH1BF7RDPQ-80#T2 Single IGBTs from Renesas, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, RJH1BF7RDPQ-80#T2 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1100 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
- Power - Max: 250 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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