RJH65T04BDPMA0#T2F
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 60A TO-3PFP
$6.99
Available to order
Reference Price (USD)
1+
$6.99000
500+
$6.9201
1000+
$6.8502
1500+
$6.7803
2000+
$6.7104
2500+
$6.6405
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJH65T04BDPMA0#T2F Single IGBT by Renesas Electronics America Inc is a game-changer for energy-efficient systems. Ideal for HVAC, robotics, and power distribution, it boasts fast turn-off times and low gate drive requirements. Its advanced technology reduces energy waste and improves system longevity. Trust Renesas Electronics America Inc for premium-quality transistors backed by exceptional support. Request a sample or quote now to start your next innovation!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
- Power - Max: 65 W
- Switching Energy: 360µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 74 nC
- Td (on/off) @ 25°C: 35ns/125ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-94
- Supplier Device Package: TO-3PFP
Related Products
Rohm Semiconductor
RGW60TS65EHRC11
Fairchild Semiconductor
FGA30N65SMD
Renesas Electronics America Inc
RJP63F3ADPP-B1#T2F
Harris Corporation
HGTP15N50C1
Harris Corporation
HGTA32N60E2
Infineon Technologies
F3L300R12MT4_B22
Harris Corporation
HGT1S15N120C3S
IXYS
IXG70IF1200NA
Harris Corporation
HGTP10N40F1D
onsemi