FGA30N65SMD
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.96
Available to order
Reference Price (USD)
450+
$2.83533
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose FGA30N65SMD Single IGBTs by Fairchild Semiconductor for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Fairchild Semiconductor's reputation for quality makes FGA30N65SMD a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: 300 W
- Switching Energy: 716µJ (on), 208µJ (off)
- Input Type: Standard
- Gate Charge: 87 nC
- Td (on/off) @ 25°C: 14ns/102ns
- Test Condition: 400V, 30A, 6Ohm, 15V
- Reverse Recovery Time (trr): 35 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
Related Products
Renesas Electronics America Inc
RJP63F3ADPP-B1#T2F
Harris Corporation
HGTP15N50C1
Harris Corporation
HGTA32N60E2
Infineon Technologies
F3L300R12MT4_B22
Harris Corporation
HGT1S15N120C3S
IXYS
IXG70IF1200NA
Harris Corporation
HGTP10N40F1D
onsemi
NGTD13T65F2WP
Infineon Technologies
F3L300R12ME4_B22
onsemi