IHW50N65R6XKSA1
Infineon Technologies
Infineon Technologies
HOME APPLIANCES 14 PG-TO247-3
$4.21
Available to order
Reference Price (USD)
1+
$4.21000
500+
$4.1679
1000+
$4.1258
1500+
$4.0837
2000+
$4.0416
2500+
$3.9995
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power electronics with IHW50N65R6XKSA1 Single IGBTs by Infineon Technologies, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Infineon Technologies for top-quality components that meet global standards. Request a quote now to learn more about how IHW50N65R6XKSA1 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
- Power - Max: 251 W
- Switching Energy: 1.5mJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 199 nC
- Td (on/off) @ 25°C: 21ns/261ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 108 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
Related Products
IXYS
IXXK300N60C3
Infineon Technologies
FP150R07N3E4
onsemi
FGHL75T65MQDTL4
IXYS
IXA20RG1200DHG-TRR
Renesas Electronics America Inc
RJH65T04BDPMA0#T2F
Rohm Semiconductor
RGW60TS65EHRC11
Fairchild Semiconductor
FGA30N65SMD
Renesas Electronics America Inc
RJP63F3ADPP-B1#T2F
Harris Corporation
HGTP15N50C1
Harris Corporation