IXA20RG1200DHG-TRR
IXYS
IXYS
IGBT 1200V 32A 125W SMPD
$9.53
Available to order
Reference Price (USD)
1+
$9.52915
500+
$9.4338585
1000+
$9.338567
1500+
$9.2432755
2000+
$9.147984
2500+
$9.0526925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with IXA20RG1200DHG-TRR Single IGBTs from IXYS, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. IXYS's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 32 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 125 W
- Switching Energy: 1.55mJ (on), 1.7mJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 15A, 56Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD™.B
Related Products
Renesas Electronics America Inc
RJH65T04BDPMA0#T2F
Rohm Semiconductor
RGW60TS65EHRC11
Fairchild Semiconductor
FGA30N65SMD
Renesas Electronics America Inc
RJP63F3ADPP-B1#T2F
Harris Corporation
HGTP15N50C1
Harris Corporation
HGTA32N60E2
Infineon Technologies
F3L300R12MT4_B22
Harris Corporation
HGT1S15N120C3S
IXYS
IXG70IF1200NA
Harris Corporation