NVMFWS0D4N04XMT1G
onsemi
onsemi
40V T10M IN S08FL GEN 2 PACKAGE
$2.64
Available to order
Reference Price (USD)
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$2.63910
500+
$2.612709
1000+
$2.586318
1500+
$2.559927
2000+
$2.533536
2500+
$2.507145
Exquisite packaging
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Upgrade your electronic designs with NVMFWS0D4N04XMT1G by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NVMFWS0D4N04XMT1G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 330µA
- Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 197W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerTDFN
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