Shopping cart

Subtotal: $0.00

G3404LL

Goford Semiconductor
G3404LL Preview
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
$0.49
Available to order
Reference Price (USD)
1+
$0.49000
500+
$0.4851
1000+
$0.4802
1500+
$0.4753
2000+
$0.4704
2500+
$0.4655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 541 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6L
  • Package / Case: SOT-23-6

Related Products

Harris Corporation

RFP25N06L

Goford Semiconductor

03N06

Renesas Electronics America Inc

UPA2350BT1P-E4-A

Goford Semiconductor

G01N20LE

Rohm Semiconductor

R6524ENXC7G

Infineon Technologies

SN7002WH6433XTMA1

Nexperia USA Inc.

PXP8R3-20QXJ

Top