03N06
Goford Semiconductor
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
$0.47
Available to order
Reference Price (USD)
1+
$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover 03N06, a versatile Transistors - FETs, MOSFETs - Single solution from Goford Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Renesas Electronics America Inc
UPA2350BT1P-E4-A
Goford Semiconductor
G01N20LE
onsemi
NVMFWS005N10MCLT1G
IXYS
IXTY2N100P-TRL
Rohm Semiconductor
R6524ENXC7G
Infineon Technologies
SN7002WH6433XTMA1
Nexperia USA Inc.
PXP8R3-20QXJ
Diodes Incorporated
DMT10H9M9LK3-13
Renesas Electronics America Inc
UPA1556AH(7)-AZ
IXYS