RFP25N06L
Harris Corporation
Harris Corporation
N-CHANNEL, MOSFET
$2.41
Available to order
Reference Price (USD)
1+
$2.41000
500+
$2.3859
1000+
$2.3618
1500+
$2.3377
2000+
$2.3136
2500+
$2.2895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of RFP25N06L, a premium Transistors - FETs, MOSFETs - Single from Harris Corporation. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RFP25N06L is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 12.5A, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
onsemi
NTMFSC012N15MC
Goford Semiconductor
03N06
Renesas Electronics America Inc
UPA2350BT1P-E4-A
Goford Semiconductor
G01N20LE
onsemi
NVMFWS005N10MCLT1G
IXYS
IXTY2N100P-TRL
Rohm Semiconductor
R6524ENXC7G
Infineon Technologies
SN7002WH6433XTMA1
Nexperia USA Inc.
PXP8R3-20QXJ
Diodes Incorporated