DMP2006UFGQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V PWRDI3333
$0.42
Available to order
Reference Price (USD)
2,000+
$0.45205
Exquisite packaging
Discount
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Enhance your circuit performance with DMP2006UFGQ-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMP2006UFGQ-7 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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