NVH4L018N075SC1
onsemi
onsemi
SIC MOS TO247-4L 750V
$18.83
Available to order
Reference Price (USD)
1+
$18.83091
500+
$18.6426009
1000+
$18.4542918
1500+
$18.2659827
2000+
$18.0776736
2500+
$17.8893645
Exquisite packaging
Discount
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NVH4L018N075SC1 by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NVH4L018N075SC1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 66A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 22mA
- Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 5010 pF @ 375 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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