RM45N600T7
Rectron USA
Rectron USA
MOSFET N-CH 600V 44.5A TO247
$2.90
Available to order
Reference Price (USD)
1+
$2.90000
500+
$2.871
1000+
$2.842
1500+
$2.813
2000+
$2.784
2500+
$2.755
Exquisite packaging
Discount
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Experience the power of RM45N600T7, a premium Transistors - FETs, MOSFETs - Single from Rectron USA. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RM45N600T7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 44.5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 15.6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 431W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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