DMN4060SVT-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 45V 4.8A TSOT26
$0.46
Available to order
Reference Price (USD)
3,000+
$0.13904
6,000+
$0.13145
15,000+
$0.12386
30,000+
$0.11475
75,000+
$0.11095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMN4060SVT-7 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMN4060SVT-7 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Alpha & Omega Semiconductor Inc.
AOSS32338C
Infineon Technologies
IRFB7740PBF
Fairchild Semiconductor
FDU6688
NXP Semiconductors
BUK625R0-40C,118
Infineon Technologies
BSZ084N08NS5ATMA1
UnitedSiC
UF3SC120009K4S
Infineon Technologies
SPS02N60C3BKMA1
Microchip Technology
TN5325N8-G
Rohm Semiconductor
RD3L150SNTL1
onsemi