IPW60R099P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 31A TO247-3
$7.00
Available to order
Reference Price (USD)
1+
$5.96000
10+
$5.35200
240+
$4.45067
720+
$3.66972
1,200+
$3.14912
Exquisite packaging
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Discover high-performance IPW60R099P7XKSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPW60R099P7XKSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 530µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 117W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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