SIDR220EP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 25 V (D-S) 175C MOSFET
$3.52
Available to order
Reference Price (USD)
1+
$3.52000
500+
$3.4848
1000+
$3.4496
1500+
$3.4144
2000+
$3.3792
2500+
$3.344
Exquisite packaging
Discount
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Vishay Siliconix presents SIDR220EP-T1-RE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIDR220EP-T1-RE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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