NTR1P02LT1G
onsemi
onsemi
MOSFET P-CH 20V 1.3A SOT23-3
$0.42
Available to order
Reference Price (USD)
1+
$0.42000
500+
$0.4158
1000+
$0.4116
1500+
$0.4074
2000+
$0.4032
2500+
$0.399
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTR1P02LT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTR1P02LT1G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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