STW26N65DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 20A TO247
$2.20
Available to order
Reference Price (USD)
1+
$2.20288
500+
$2.1808512
1000+
$2.1588224
1500+
$2.1367936
2000+
$2.1147648
2500+
$2.092736
Exquisite packaging
Discount
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Optimize your electronic systems with STW26N65DM2, a high-quality Transistors - FETs, MOSFETs - Single from STMicroelectronics. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, STW26N65DM2 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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